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this is information on a product in full production. september 2014 docid022602 rev 4 1/16 STL36N55M5 n-channel 550 v, 0.066 ? typ., 22.5 a mdmesh? m5 power mosfet in a powerflat? 8x8 hv package datasheet ? production data figure 1. internal schematic diagram features ? extremely low r ds(on) ? low gate charge and input ? capacitance ? excellent switching performance ? 100% avalanche tested applications ? switching applications description this device is an n-channel power mosfet based on mdmesh? m5 innovative vertical process technology combined with the well- known powermesh? horizontal layout. the resulting product offers extremely low on- resistance, making it particularly suitable for applications requiring high power and superior efficiency. 6 6 6 * ' 3rzhu)/$7?[+9 %rwwrpylhz $0y ' * 6 order code v ds @ t jmax r ds(on) max i d STL36N55M5 600 v 0.090 ? 22.5 a table 1. device summary order code marking package packaging STL36N55M5 36n55m5 powerflat? 8x8 hv tape and reel www.st.com
contents STL36N55M5 2/16 docid022602 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid022602 rev 4 3/16 STL36N55M5 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 550 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case and limited by package. . drain current (continuous) at t c = 25 c 22.5 a i d (1) drain current (continuous) at t c = 100 c 17 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 90 a i d (3) 3. when mounted on fr-4 board of inch2, 2 oz cu. drain current (continuous) at t amb = 25 c 3.7 a i d (3) drain current (continuous) at t amb = 100 c 2.2 a p tot (3) total dissipation at t amb = 25 c 2.8 w p tot (1) total dissipation at t c = 25 c 150 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max ) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 510 mj dv/dt (4) 4. i sd 22.5 a, di/dt 400 a/s, v peak < v (br)dss , v dd = 340 v peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.83 c/w r thj-amb (1) 1. when mounted on fr-4 board of inch2, 2 oz cu. thermal resistance junction-ambient max 45 c/w
electrical characteristics STL36N55M5 4/16 docid022602 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 550 v i dss zero gate voltage drain current (v gs = 0) v ds = 550 v 1 a v ds = 550 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 16.5 a 0.066 0.090 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2670 - pf c oss output capacitance - 75 - pf c rss reverse transfer capacitance -6.6-pf c o(er) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 440 v -71-pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance time related - 192 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.85 - ? q g total gate charge v dd = 440 v, i d = 16.5 a, v gs = 10 v (see figure 16 ) -62-nc q gs gate-source charge - 15 - nc q gd gate-drain charge - 27 - nc
docid022602 rev 4 5/16 STL36N55M5 electrical characteristics 16 table 6. switching times symbol parameter test conditions min. typ. max unit t d(v) voltage delay time v dd = 400 v, i d = 22 a, r g = 4.7 ? v gs = 10 v (see figure 20 ) -56-ns t r(v) voltage rise time - 13 - ns t f(i) current fall time - 13 - ns t c(off) crossing time - 17 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) 1. the value is rated according to r thj-case and limited by package. source-drain current - 22.5 a i sdm (1),(2) 2. pulse width limited by safe operating area source-drain current (pulsed) - 90 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 22.5 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 22.5 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 292 ns q rr reverse recovery charge - 4.2 c i rrm reverse recovery current - 29 a t rr reverse recovery time i sd = 22.5 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 364 ns q rr reverse recovery charge - 6 c i rrm reverse recovery current - 33 a
electrical characteristics STL36N55M5 6/16 docid022602 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am14937v1 10 -5 10 -4 10 -3 10 -2 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 zth powerflat 8x8 hv i d 60 50 40 0 0 10 v ds (v) 20 (a) 5 15 25 70 6v 7v v gs =9, 10v 30 20 10 8v am14930v1 i d 60 40 20 0 3 5 v gs (v) 7 (a) 4 6 8 70 9 10 30 50 v ds =25v am14931v1 v gs 6 4 2 0 0 10 q g (nc) (v) 40 8 20 30 10 v dd =440v i d =16.5a 50 12 300 200 100 0 400 450 v ds 60 70 350 250 150 50 v ds (v) am14932v1 r ds(on) 0.061 0.059 0.057 0.055 0 20 i d (a) ( ) 10 0.063 v gs =10v 15 5 0.067 0.065 0.069 0.071 am14933v2
docid022602 rev 4 7/16 STL36N55M5 electrical characteristics 16 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v (br)dss vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am14934v1 e oss 6 4 2 0 0 100 v ds (v) (j) 400 8 200 300 10 500 am14935v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am05459v3 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v gs =10v i d =16.5v am05460v3 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v3 9 %5'66 7 - ?& qrup , ' p$ $0y
electrical characteristics STL36N55M5 8/16 docid022602 rev 4 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode. e 300 200 100 0 0 20 r g ( ) ( j) 10 30 400 500 600 40 i d =22a v dd =400v eon eoff v gs =10v am14936v1
docid022602 rev 4 9/16 STL36N55M5 test circuits 16 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am05540v2 id vgs vds 90%vds 10%id 90%vgs on tdelay-off tfall trise tcross -over 10%vds 90%id vgs(i(t)) on -off tfall trise - )) concept waveform for inductive load turn-off
package mechanical data STL36N55M5 10/16 docid022602 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
docid022602 rev 4 11/16 STL36N55M5 package mechanical data 16 figure 21. powerflat? 8x8 hv drawing mechanical data 8222871_rev_c
package mechanical data STL36N55M5 12/16 docid022602 rev 4 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 figure 22. powerflat? 8x8 hv recommended footprint 8222871_rev_c_footprint
docid022602 rev 4 13/16 STL36N55M5 packaging mechanical data 16 5 packaging mechanical data figure 23. powerflat? 8x8 hv tape figure 24. powerflat? 8x8 hv package orientation in carrier tape. w (16.000.3) e (1.750.1) f (7.500.1) a0 (8.300.1) p1 (12.000.1) p2 (2.00.1) p0 (4.00.1) d0 ( 1.550.05) d1 ( 1.5 min) t (0.300.05) b0 (8.300.1) k0 (1.100.1) note: base and bulk quantity 3000 pcs 8229819_tape_reva
packaging mechanical data STL36N55M5 14/16 docid022602 rev 4 figure 25. powerflat? 8x8 hv reel 8229819_reel_reva
docid022602 rev 4 15/16 STL36N55M5 revision history 16 6 revision history table 9. document revision history date revision changes 14-dec-2011 1 first release. 17-oct-2012 2 updated: table 5 , 6 and table 7.: source drain diode typ. values 24-jan-2013 3 ? modified: figure 1: internal schematic diagram 4 and 6 ? document status promoted from preliminary data to production data ? modified: v dd on table 5 ? minor text changes 22-sep-2014 4 ? updated title, features and description in cover page. ? updated figure 1: internal schematic diagram . ? updated section 4: package mechanical data .
STL36N55M5 16/16 docid022602 rev 4 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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